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2020年存储技术总结与展望

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R可能能够进一步缩小至12nm以下。由于图形化，漏电流和感测裕度的挑战，单元尺寸微缩的速度越来越慢。</span></p><p><span>Graphic DRAM和高带宽内存(例如GDDR6(X)和HBM2(E))采用20 nm或10 nm级的DRAM技术节点。</span></p><p><span>通过在模块中添加低功耗DRAM芯片，智能手机上的相机模块实现了三颗芯片的堆叠。</span></p><p><span>在先进的DRAM产品中可以看到一些创新，例如高k介电材料，柱形电容器，凹槽沟道LV晶体管和HKMG外围晶体管。</span></p><p><span>展望DRAM技术趋势和研发路线图，DRAM微缩将在未来10多年中持续进行。</span></p><p mpa-is-content=\"t\"><span><strong mpa-from-tpl=\"t\" mpa-is-content=\"t\">NAND</strong></span></p><span></span><p><span>随着主要NAND制造商争相增加3D NAND堆叠层的数量，他们都已经推出了自己的96L或128L 3D NAND芯片。三星128L V-NAND（V6），KIOXIA和Western Digital Company（WDC）96L BiCS4，Intel / Micron 96L / 128L和176L FG CuA以及SK hynix 128L 4D NAND PUC产品已投放市场。我们将讨论该领域中许多创新的变化。</span></p><p><span>除了存储密度之外，3D NAND还应用于高速SSD，例如三星Z-SSD和具有多plane的并行KIOXIA XL-FLASH。</span></p><p><span>SK hynix已达到147层垂直存储单元堆叠，探讨了他们的解决方案以及美光的解决方案。</span></p><p mpa-is-content=\"t\"><span><strong mpa-from-tpl=\"t\" mpa-is-content=\"t\">嵌入式和新兴存储技术</strong></span></p><span></span><p><span>尽管Micron的X100 SSD目前仅可用于附加卡（AIC），但Intel不仅将XPoint内存应用程序扩展到常规SSD，而且还扩展到了Intel Optane非易失内存。</span></p><p><span>Everspin已经发布许多新型pMTJ MRAM产品（第三代，1GB /芯片基于 28nm工艺），Avalanche/Renesas（40纳米）和三星/<a href=\"https://laohu8.com/S/SNE\">索尼</a>（28FDS）。Dialog（先前为Adesto）的第二代ReRAM（CBRAM）产品也已上市。</span></p><p mpa-is-content=\"t\"><span><strong mpa-from-tpl=\"t\" mpa-is-content=\"t\">技术路线图</strong></span></p><p><span>本演示文稿中还包括Techinsights对当前和将来的DRAM，NAND和新兴/嵌入式存储器技术分析，趋势和路线图，这些内容通常仅供我们的存储器用户使用。</span></p><p><span>以下是研讨会的演示文稿。</span></p><p><img src=\"https://static.tigerbbs.com/59209464c7f840d39f53c9cce92a4757\"/></p><p><img src=\"https://static.tigerbbs.com/f3eed9379aa5444c8b9e1cbaf5e367bb\"/></p><p><img src=\"https://static.tigerbbs.com/0e9032cb40ee4f3297c043da0d02e0e2\"/></p><p><img src=\"https://static.tigerbbs.com/6802da25ede54d518125cabc217d18b9\"/></p><p><img src=\"https://static.tigerbbs.com/585c5ae18b3749d3ae74a8fb2299e6f2\"/></p><p><img 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src=\"https://static.tigerbbs.com/742e1c823e6143a69274d7bd16a959ba\"/></p><p><img src=\"https://static.tigerbbs.com/17224591079842399693c5fe6c58ad66\"/></p><p><img src=\"https://static.tigerbbs.com/0d66cd33b77f4711a1a12abb64fd44f4\"/></p><p><img src=\"https://static.tigerbbs.com/f7c81c853de143dc8566e0ae8023f5c7\"/></p><p><img src=\"https://static.tigerbbs.com/335591b709384bd8a2fa64ad7105f653\"/></p><p><img src=\"https://static.tigerbbs.com/88f95040c8ad4378bf431e3ffc41c258\"/></p><p><img src=\"https://static.tigerbbs.com/ae5b885c829c473aa886a819cf935bc0\"/></p><p><img arial=\"\" auto=\"\" border-box=\"\" gb=\"\" helvetica=\"\" neue=\"\" normal=\"\" sans=\"\" sans-serif=\"\" sc=\"\" src=\"https://static.tigerbbs.com/eac6a3e105aa4634b5aa06b5d5047907\" ui=\"\" visible=\"\" yahei=\"\"/></p><p>*免责声明：本文由作者原创。文章内容系作者个人观点，半导体行业观察转载仅为了传达一种不同的观点，不代表半导体行业观察对该观点赞同或支持，如果有任何异议，欢迎联系半导体行业观察。</p><p><strong>今天是《半导体行业观察》为您分享的第2521内容，欢迎关注。</strong></p><p>推荐阅读</p><p>★<span>IDM：我太难了！</span></p><p>★<span>“逃离”<a href=\"https://laohu8.com/S/NVDA\">英伟达</a></span></p><p>★<span>3D闪存，176层了！</span></p><p>半导体行业观察</p><p><img src=\"\"/></p><p>『<strong>半导体第一垂直媒体</strong><span>』</span></p><p><strong>实时 专业 原创 深度</strong></p><p><strong>识别二维码</strong>，回复下方关键词，阅读更多</p><p><span>存储｜晶圆｜华为</span>｜FPGA｜<a href=\"https://laohu8.com/S/INTC\">英特尔</a>｜<a href=\"https://laohu8.com/S/QCOM\">高通</a>｜射频｜封测</p><p><span>回复 <strong>投稿</strong>，看《如何成为“半导体行业观察”的一员 》</span></p><p>回复 <strong>搜索</strong>，还能轻松找到其他你感兴趣的文章！</p><p><img src=\"https://static.tigerbbs.com/1454d7c073554fdf961b80283d35f978\"/></p>\n</div></body></html>","source":"weixin_highlight","collect":0,"html":"<!DOCTYPE html>\n<html>\n<head>\n<meta http-equiv=\"Content-Type\" content=\"text/html; charset=utf-8\" />\n<meta name=\"viewport\" content=\"width=device-width,initial-scale=1.0,minimum-scale=1.0,maximum-scale=1.0,user-scalable=no\"/>\n<meta name=\"format-detection\" content=\"telephone=no,email=no,address=no\" />\n<title>2020年存储技术总结与展望</title>\n<style type=\"text/css\">\na,abbr,acronym,address,applet,article,aside,audio,b,big,blockquote,body,canvas,caption,center,cite,code,dd,del,details,dfn,div,dl,dt,\nem,embed,fieldset,figcaption,figure,footer,form,h1,h2,h3,h4,h5,h6,header,hgroup,html,i,iframe,img,ins,kbd,label,legend,li,mark,menu,nav,\nobject,ol,output,p,pre,q,ruby,s,samp,section,small,span,strike,strong,sub,summary,sup,table,tbody,td,tfoot,th,thead,time,tr,tt,u,ul,var,video{ font:inherit;margin:0;padding:0;vertical-align:baseline;border:0 }\nbody{ font-size:16px; line-height:1.5; color:#999; background:transparent; }\n.wrapper{ overflow:hidden;word-break:break-all;padding:10px; }\nh1,h2{ font-weight:normal; line-height:1.35; margin-bottom:.6em; }\nh3,h4,h5,h6{ line-height:1.35; margin-bottom:1em; }\nh1{ 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margin: 0; padding: 0; border-radius: 50%; float: left;}\n.head .h-content { margin: 0; padding: 0 0 0 9px; float: left;}\n.head .h-name {font-size: 13px; color: #eee; margin: 0;}\n.head .h-time {font-size: 11px; color: #7E829C; margin: 0;line-height: 11px;}\n.small {font-size: 12.5px; display: inline-block; transform: scale(0.9); -webkit-transform: scale(0.9); transform-origin: left; -webkit-transform-origin: left;}\n.smaller {font-size: 12.5px; display: inline-block; transform: scale(0.8); -webkit-transform: scale(0.8); transform-origin: left; -webkit-transform-origin: left;}\n.bt-text {font-size: 12px;margin: 1.5em 0 0 0}\n.bt-text p {margin: 0}\n</style>\n</head>\n<body>\n<div class=\"wrapper\">\n<header>\n<h2 class=\"title\">\n2020年存储技术总结与展望\n</h2>\n\n<h4 class=\"meta\">\n\n\n<a class=\"head\" href=\"https://laohu8.com/wemedia/1001700217\">\n\n\n<div class=\"h-thumb\" style=\"background-image:url(https://static.tigerbbs.com/705285f8deea4d7b8e48df7848a67868);background-size:cover;\"></div>\n\n<div class=\"h-content\">\n<p class=\"h-name\">半导体行业观察 </p>\n<p class=\"h-time\">2020-12-12 09:54</p>\n</div>\n\n</a>\n\n\n</h4>\n\n</header>\n<article>\n<html><body><div>\n<p><img src=\"https://static.tigerbbs.com/b5997d18e4b84bfb98b04af5ff715387\"/></p><p><span>来源：转载自公众号「半导体百科」，谢谢。</span></p><p><span>最近Techinsights举办了一场关于存储技术的网络研讨会，Jeongdong Choe博士介绍了他对最新的DRAM，NAND，新兴和嵌入式存储器技术的观察与分析。以下概述了讨论的相关主题。</span></p><p mpa-is-content=\"t\"><span><strong mpa-from-tpl=\"t\" mpa-is-content=\"t\">DRAM</strong></span></p><p><span><a href=\"https://laohu8.com/S/SMSN.UK\">三星</a>，美光和SK hynix等主要DRAM厂商已经生产出缩小至15 nm设计规则（D / R）的DRAM单元。现在，他们正在开发n + 1和n + 2世代，即所谓的1a（或1α）和1b（或1β），这意味着采用EUV的DRAM单元D / R可能能够进一步缩小至12nm以下。由于图形化，漏电流和感测裕度的挑战，单元尺寸微缩的速度越来越慢。</span></p><p><span>Graphic DRAM和高带宽内存(例如GDDR6(X)和HBM2(E))采用20 nm或10 nm级的DRAM技术节点。</span></p><p><span>通过在模块中添加低功耗DRAM芯片，智能手机上的相机模块实现了三颗芯片的堆叠。</span></p><p><span>在先进的DRAM产品中可以看到一些创新，例如高k介电材料，柱形电容器，凹槽沟道LV晶体管和HKMG外围晶体管。</span></p><p><span>展望DRAM技术趋势和研发路线图，DRAM微缩将在未来10多年中持续进行。</span></p><p mpa-is-content=\"t\"><span><strong mpa-from-tpl=\"t\" mpa-is-content=\"t\">NAND</strong></span></p><span></span><p><span>随着主要NAND制造商争相增加3D NAND堆叠层的数量，他们都已经推出了自己的96L或128L 3D NAND芯片。三星128L V-NAND（V6），KIOXIA和Western Digital Company（WDC）96L BiCS4，Intel / Micron 96L / 128L和176L FG CuA以及SK hynix 128L 4D NAND PUC产品已投放市场。我们将讨论该领域中许多创新的变化。</span></p><p><span>除了存储密度之外，3D NAND还应用于高速SSD，例如三星Z-SSD和具有多plane的并行KIOXIA XL-FLASH。</span></p><p><span>SK hynix已达到147层垂直存储单元堆叠，探讨了他们的解决方案以及美光的解决方案。</span></p><p mpa-is-content=\"t\"><span><strong mpa-from-tpl=\"t\" mpa-is-content=\"t\">嵌入式和新兴存储技术</strong></span></p><span></span><p><span>尽管Micron的X100 SSD目前仅可用于附加卡（AIC），但Intel不仅将XPoint内存应用程序扩展到常规SSD，而且还扩展到了Intel Optane非易失内存。</span></p><p><span>Everspin已经发布许多新型pMTJ MRAM产品（第三代，1GB /芯片基于 28nm工艺），Avalanche/Renesas（40纳米）和三星/<a href=\"https://laohu8.com/S/SNE\">索尼</a>（28FDS）。Dialog（先前为Adesto）的第二代ReRAM（CBRAM）产品也已上市。</span></p><p mpa-is-content=\"t\"><span><strong mpa-from-tpl=\"t\" mpa-is-content=\"t\">技术路线图</strong></span></p><p><span>本演示文稿中还包括Techinsights对当前和将来的DRAM，NAND和新兴/嵌入式存储器技术分析，趋势和路线图，这些内容通常仅供我们的存储器用户使用。</span></p><p><span>以下是研讨会的演示文稿。</span></p><p><img src=\"https://static.tigerbbs.com/59209464c7f840d39f53c9cce92a4757\"/></p><p><img src=\"https://static.tigerbbs.com/f3eed9379aa5444c8b9e1cbaf5e367bb\"/></p><p><img src=\"https://static.tigerbbs.com/0e9032cb40ee4f3297c043da0d02e0e2\"/></p><p><img src=\"https://static.tigerbbs.com/6802da25ede54d518125cabc217d18b9\"/></p><p><img src=\"https://static.tigerbbs.com/585c5ae18b3749d3ae74a8fb2299e6f2\"/></p><p><img src=\"https://static.tigerbbs.com/640a7ca91d924e21b59e162b83b716cb\"/></p><p><img src=\"https://static.tigerbbs.com/4bd5b34467784f4b8b440682e8e43b9a\"/></p><p><img src=\"https://static.tigerbbs.com/71194e5609aa483089868d4072eb4b1e\"/></p><p><img src=\"https://static.tigerbbs.com/51b62ed2d3b249e0828687f0b5b742e9\"/></p><p><img src=\"https://static.tigerbbs.com/b9c0e55cf3764522a9523219ba363814\"/></p><p><img src=\"https://static.tigerbbs.com/dd7c682f20fe42dea028c80d4f32d73b\"/></p><p><img src=\"https://static.tigerbbs.com/41e5396403264323a2e3226665349ca2\"/></p><p><img src=\"https://static.tigerbbs.com/6935f3916d744ae1bebb20aa5a77dd1c\"/></p><p><img src=\"https://static.tigerbbs.com/e501af81cc024bfab5250d9084aa07c2\"/></p><p><img src=\"https://static.tigerbbs.com/a65c19871e12441eb3511f0e666825ff\"/></p><p><img src=\"https://static.tigerbbs.com/eb9bf5f2ffef428983f7f8e3c8bf882b\"/></p><p><img src=\"https://static.tigerbbs.com/f5b7e5afc07f47ada6a666716a4f6d48\"/></p><p><img src=\"https://static.tigerbbs.com/8351f9dcacd7470ab6b9a90e3355a85d\"/></p><p><img src=\"https://static.tigerbbs.com/795441b0800b4f228cb253af237f4e01\"/></p><p><img src=\"https://static.tigerbbs.com/8206b79b99be431282b3d69f39a753e0\"/></p><p><img src=\"https://static.tigerbbs.com/dc318160fb5b4aaaa8f4bd6c2c93a2e7\"/></p><p><img src=\"https://static.tigerbbs.com/23ec2f7bf1744b4587b46fe2d9a3ed3a\"/></p><p><img src=\"https://static.tigerbbs.com/3cbd5d04084343b0b5e11eea3212aa2d\"/></p><p><img src=\"https://static.tigerbbs.com/2f0fc5b5d6c5408eaebc2fb06e57cc00\"/></p><p><img src=\"https://static.tigerbbs.com/f845817d60e74a27a0db426fdd6c47ab\"/></p><p><img src=\"https://static.tigerbbs.com/f65171b31562498b9c7aabaef8f650d0\"/></p><p><img src=\"https://static.tigerbbs.com/1b8693f691dd43cf9eb0ada5f19902d3\"/></p><p><img src=\"https://static.tigerbbs.com/c7fecfa3d0b849b79dfbea4b5da97e9e\"/></p><p><img src=\"https://static.tigerbbs.com/65ba90524e6548e2bc783a650ffc9872\"/></p><p><img src=\"https://static.tigerbbs.com/764fd665426043c49f71db666e1fbb85\"/></p><p><img src=\"https://static.tigerbbs.com/cedfbcb37c5648ce885f35d932be98d1\"/></p><p><img src=\"https://static.tigerbbs.com/d42cbbafdb6e47869b07629c4b3b5eec\"/></p><p><img src=\"https://static.tigerbbs.com/8046ccda27d74e5b99d143488b26b500\"/></p><p><img src=\"https://static.tigerbbs.com/440f2686ce564a88b5d53f7dc8e62663\"/></p><p><img src=\"https://static.tigerbbs.com/546af65313c840df99a7a1ed7172c870\"/></p><p><img src=\"https://static.tigerbbs.com/ddbca8056f694ae0982e702afd922e65\"/></p><p><img src=\"https://static.tigerbbs.com/de4a8e971e1843d091cc84d5cb67ab37\"/></p><p><img src=\"https://static.tigerbbs.com/1c46cdfaa9554ebb92d7be6093200a96\"/></p><p><img src=\"https://static.tigerbbs.com/ba932f62eb0842d7bee108c20d7ee749\"/></p><p><img src=\"https://static.tigerbbs.com/b6acb45b60f54861b66c462a5a76a1d9\"/></p><p><img src=\"https://static.tigerbbs.com/347a74dd6d7b4689a75e562e14ace3c7\"/></p><p><img src=\"https://static.tigerbbs.com/742e1c823e6143a69274d7bd16a959ba\"/></p><p><img src=\"https://static.tigerbbs.com/17224591079842399693c5fe6c58ad66\"/></p><p><img src=\"https://static.tigerbbs.com/0d66cd33b77f4711a1a12abb64fd44f4\"/></p><p><img src=\"https://static.tigerbbs.com/f7c81c853de143dc8566e0ae8023f5c7\"/></p><p><img src=\"https://static.tigerbbs.com/335591b709384bd8a2fa64ad7105f653\"/></p><p><img src=\"https://static.tigerbbs.com/88f95040c8ad4378bf431e3ffc41c258\"/></p><p><img src=\"https://static.tigerbbs.com/ae5b885c829c473aa886a819cf935bc0\"/></p><p><img arial=\"\" auto=\"\" border-box=\"\" gb=\"\" helvetica=\"\" neue=\"\" normal=\"\" sans=\"\" sans-serif=\"\" sc=\"\" src=\"https://static.tigerbbs.com/eac6a3e105aa4634b5aa06b5d5047907\" ui=\"\" visible=\"\" yahei=\"\"/></p><p>*免责声明：本文由作者原创。文章内容系作者个人观点，半导体行业观察转载仅为了传达一种不同的观点，不代表半导体行业观察对该观点赞同或支持，如果有任何异议，欢迎联系半导体行业观察。</p><p><strong>今天是《半导体行业观察》为您分享的第2521内容，欢迎关注。</strong></p><p>推荐阅读</p><p>★<span>IDM：我太难了！</span></p><p>★<span>“逃离”<a href=\"https://laohu8.com/S/NVDA\">英伟达</a></span></p><p>★<span>3D闪存，176层了！</span></p><p>半导体行业观察</p><p><img src=\"\"/></p><p>『<strong>半导体第一垂直媒体</strong><span>』</span></p><p><strong>实时 专业 原创 深度</strong></p><p><strong>识别二维码</strong>，回复下方关键词，阅读更多</p><p><span>存储｜晶圆｜华为</span>｜FPGA｜<a href=\"https://laohu8.com/S/INTC\">英特尔</a>｜<a href=\"https://laohu8.com/S/QCOM\">高通</a>｜射频｜封测</p><p><span>回复 <strong>投稿</strong>，看《如何成为“半导体行业观察”的一员 》</span></p><p>回复 <strong>搜索</strong>，还能轻松找到其他你感兴趣的文章！</p><p><img src=\"https://static.tigerbbs.com/1454d7c073554fdf961b80283d35f978\"/></p>\n</div></body></html>\n\n</article>\n</div>\n</body>\n</html>\n","type":0,"thumbnail":"https://static.tigerbbs.com/e9352eeb054da879ea3921619a5a8a9c","relate_stocks":{"03086":"华夏纳指","MU":"美光科技","09086":"华夏纳指-U"},"source_url":"http://mp.weixin.qq.com/s?__biz=MzU3OTA0MjQ3Mg==&mid=2247565901&idx=7&sn=16045a15d0a8410abdc30bfdf3e02582&chksm=fd6faf8aca18269cfe38d67ef01672a0a9011a826ccdf46d9193857f4d5c5cc45f55cc526000&scene=0#rd","is_english":false,"share_image_url":"https://static.laohu8.com/ecd74548980bc5b366aa8f4b37ed0bd5","article_id":"2090892876","content_text":"来源：转载自公众号「半导体百科」，谢谢。最近Techinsights举办了一场关于存储技术的网络研讨会，Jeongdong Choe博士介绍了他对最新的DRAM，NAND，新兴和嵌入式存储器技术的观察与分析。以下概述了讨论的相关主题。DRAM三星，美光和SK hynix等主要DRAM厂商已经生产出缩小至15 nm设计规则（D / R）的DRAM单元。现在，他们正在开发n + 1和n + 2世代，即所谓的1a（或1α）和1b（或1β），这意味着采用EUV的DRAM单元D / R可能能够进一步缩小至12nm以下。由于图形化，漏电流和感测裕度的挑战，单元尺寸微缩的速度越来越慢。Graphic DRAM和高带宽内存(例如GDDR6(X)和HBM2(E))采用20 nm或10 nm级的DRAM技术节点。通过在模块中添加低功耗DRAM芯片，智能手机上的相机模块实现了三颗芯片的堆叠。在先进的DRAM产品中可以看到一些创新，例如高k介电材料，柱形电容器，凹槽沟道LV晶体管和HKMG外围晶体管。展望DRAM技术趋势和研发路线图，DRAM微缩将在未来10多年中持续进行。NAND随着主要NAND制造商争相增加3D NAND堆叠层的数量，他们都已经推出了自己的96L或128L 3D NAND芯片。三星128L V-NAND（V6），KIOXIA和Western Digital Company（WDC）96L BiCS4，Intel / Micron 96L / 128L和176L FG CuA以及SK hynix 128L 4D NAND PUC产品已投放市场。我们将讨论该领域中许多创新的变化。除了存储密度之外，3D NAND还应用于高速SSD，例如三星Z-SSD和具有多plane的并行KIOXIA XL-FLASH。SK hynix已达到147层垂直存储单元堆叠，探讨了他们的解决方案以及美光的解决方案。嵌入式和新兴存储技术尽管Micron的X100 SSD目前仅可用于附加卡（AIC），但Intel不仅将XPoint内存应用程序扩展到常规SSD，而且还扩展到了Intel Optane非易失内存。Everspin已经发布许多新型pMTJ MRAM产品（第三代，1GB /芯片基于 28nm工艺），Avalanche/Renesas（40纳米）和三星/索尼（28FDS）。Dialog（先前为Adesto）的第二代ReRAM（CBRAM）产品也已上市。技术路线图本演示文稿中还包括Techinsights对当前和将来的DRAM，NAND和新兴/嵌入式存储器技术分析，趋势和路线图，这些内容通常仅供我们的存储器用户使用。以下是研讨会的演示文稿。*免责声明：本文由作者原创。文章内容系作者个人观点，半导体行业观察转载仅为了传达一种不同的观点，不代表半导体行业观察对该观点赞同或支持，如果有任何异议，欢迎联系半导体行业观察。今天是《半导体行业观察》为您分享的第2521内容，欢迎关注。推荐阅读★IDM：我太难了！★“逃离”英伟达★3D闪存，176层了！半导体行业观察『半导体第一垂直媒体』实时 专业 原创 深度识别二维码，回复下方关键词，阅读更多存储｜晶圆｜华为｜FPGA｜英特尔｜高通｜射频｜封测回复 投稿，看《如何成为“半导体行业观察”的一员 》回复 搜索，还能轻松找到其他你感兴趣的文章！","news_type":1},"isVote":1,"tweetType":1,"viewCount":2829,"commentLimit":10,"likeStatus":false,"favoriteStatus":false,"reportStatus":false,"symbols":[],"verified":2,"subType":0,"readableState":1,"langContent":"CN","currentLanguage":"CN","warmUpFlag":false,"orderFlag":false,"shareable":true,"causeOfNotShareable":"","featuresForAnalytics":[],"commentAndTweetFlag":false,"andRepostAutoSelectedFlag":false,"upFlag":false,"length":4,"xxTargetLangEnum":"ZH_CN"},"commentList":[],"isCommentEnd":true,"isTiger":false,"isWeiXinMini":false,"url":"/m/post/330447095"}