美国芯片再遭重击，1.8纳米芯片10颗坏9颗，梦想破灭！

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美国力求在芯片制造方面重夺全球牛耳，为此美国给钱给资源扶持美国本土芯片龙头Intel，不过日前外媒传出对美国芯片行业不利的消息，指Intel的1.8纳米工艺生产遭遇难题，良率低至一成，生产的芯片10颗坏9颗。导致Intel的1.8纳米出现如此重大问题，可能在于Intel同时采用了多项技术所致，Intel为全球首家采用2纳米EUV光刻机生产芯片的厂商，而在1.8纳米工艺上又采用了全新的...

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shattered!","themeId":null,"isJumpTheme":false,"ttsUrl":null,"symbols_score_info":{"TSM":0.9,"ASML":0.9,"INTC":0.9,"03165":0.6,"03145":0.6},"content_text":"美国力求在芯片制造方面重夺全球牛耳，为此美国给钱给资源扶持美国本土芯片龙头Intel，不过日前外媒传出对美国芯片行业不利的消息，指Intel的1.8纳米工艺生产遭遇难题，良率低至一成，生产的芯片10颗坏9颗。导致Intel的1.8纳米出现如此重大问题，可能在于Intel同时采用了多项技术所致，Intel为全球首家采用2纳米EUV光刻机生产芯片的厂商，而在1.8纳米工艺上又采用了全新的Nanosheet技术，多项技术同时采用导致Intel的芯片良率超低。对于2纳米EUV光刻机，美国是刻意扶持Intel了，在美国的压力下，光刻机巨头ASML将今年量产的10台2纳米EUV光刻机中的6台给了Intel，可以看出美国对Intel的偏袒。这对于Intel来说固然是利好，不过对于台积电来说却未必是坏事，当年研发7纳米的时候，由于技术难度太大，台积电就没有在7纳米工艺上采用第一代EUV光刻机，而是用原来的DUV光刻机开发出第一代7纳米，结果是率先引入第一代EUV光刻机的三星量产7纳米落后了。2纳米EUV光刻机的技术难度就更大了，Intel率先引入将可能面临着许多技术难题，台积电让Intel率先尝试，而自己留下时间来吃透2纳米EUV光刻机，然后再导入生产线，反而可能再次实现后来者居上。至于在先进工艺上引入全新的技术，台积电和三星同样较量过。在3纳米工艺上，台积电仍然采取了保守的策略，继续用FinFET技术，而三星为了在3纳米工艺上彻底超越台积电，再次率先采用全新的GAA技术，结果台积电的3纳米工艺良率达到55%，而三星的3纳米如今也只有20%左右。原因就在于先进工艺面临的变数太多，同时引入多项技术和新设备，可能导致芯片制造企业面临太多技术困难，最终是哪个都没搞好，将生产技术变成夹生饭，从第一代EUV光刻机和GAA技术的引入都可以看出三星得到教训。相比起台积电和三星，Intel从2014年量产14纳米工艺之后，在技术研发进展方面就一直落后，可以说芯片制造技术方面甚至还不如三星，如此情况下Intel如此激进地同时采用全新的2纳米EUV光刻机以及Nanosheet技术，非常可能导致1.8纳米良率低至如此地步。如今的Intel也正处于风雨飘摇之中，近几年来不时出现亏损，今年以来更是连续三个季度亏损，连连的亏损以及市场被AMD抢走，导致CEO基辛格已在近期被董事会迫使退休，人心动荡之下，Intel的开发技术难度极高的1.8纳米更有可能出现问题。Intel开发1.8纳米出现问题，不仅仅是Intel自身的损失，更是整个美国芯片行业的损失，代表着美国芯片试图掌控芯片牛耳的图谋失败了，美国倾力扶持Intel，结果得到的是如此结果，未来美国芯片行业将更加依赖台积电。美国芯片遭受挫折，台积电可不会坐视机会，据悉台积电已提出要求提高芯片代工价格一成，面对美国遭受的挫折，美国芯片普遍无奈接受，台积电也日益成为芯片行业的赢家，净利润率已超过四成，这样的利润率水平比美国许多强大的科技企业都要高得多。","kind":"news","is_publish_news":true,"is_publish_highlight":false,"is_publish_live":false,"is_publish_wemedia":null,"editions":null,"column":"","sentiment":"-2","news_tag":"","news_rank":0,"symbols":[],"gpt_button":0},"commentList":[],"isCommentEnd":true,"newsSizeData":{"likeSize":1,"commentSize":0,"repostSize":0,"favoriteSize":0,"likeStatus":false,"favoriteStatus":false},"APP":{"userAgent":"Mozilla/5.0 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