接口速度5.6 GT/s、超400层！三星将推出第10代V-NAND闪存

快科技12-05

快科技12月5日消息，据媒体报道，三星即将在国际固态电路会议（ISSCC）上展示其最新的第10代超过400层3D NAND Flash，接口速度可达5.6 GT/s。三星的这一新一代V-NAND保持了TLC（三级单元，或每个单元3位）架构，每个芯片的容量为1Tb（128GB）。三星声称，其新的超400层3D TLC NAND Flash的存储密度达到了28 Gb/mm²，略低于其1Tb 3D ...

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{"i18n":{"language":"zh_CN"},"isChannel":false,"data":{"share":"https://www.laohu8.com/m/news/2489164106?lang=zh_CN&edition=full","thumbnail":"","is_english":false,"pubTime":"2024-12-05 11:56","share_image_url":"https://static.laohu8.com/e9f99090a1c2ed51c021029395664489","id":"2489164106","market":"hk","top_or_hot":-1,"title":"接口速度5.6 GT/s、超400层！三星将推出第10代V-NAND闪存","media":"快科技","content":"<div>\n<p>快科技12月5日消息，据媒体报道，三星即将在国际固态电路会议（ISSCC）上展示其最新的第10代超过400层3D NAND Flash，接口速度可达5.6 GT/s。三星的这一新一代V-NAND保持了TLC（三级单元，或每个单元3位）架构，每个芯片的容量为1Tb（128GB）。三星声称，其新的超400层3D TLC NAND Flash的存储密度达到了28 Gb/mm²，略低于其1Tb 3D ...</p>\n\n<a href=\"https://tech.ifeng.com/c/8f3y6Bzi8iX\">网页链接</a>\n\n</div>\n","source":"fenghuang_stock","html":"<!DOCTYPE html>\n<html>\n<head>\n<meta http-equiv=\"Content-Type\" content=\"text/html; charset=utf-8\" />\n<meta name=\"viewport\" content=\"width=device-width,initial-scale=1.0,minimum-scale=1.0,maximum-scale=1.0,user-scalable=no\"/>\n<meta name=\"format-detection\" content=\"telephone=no,email=no,address=no\" />\n<title>接口速度5.6 GT/s、超400层！三星将推出第10代V-NAND闪存</title>\n<style type=\"text/css\">\na,abbr,acronym,address,applet,article,aside,audio,b,big,blockquote,body,canvas,caption,center,cite,code,dd,del,details,dfn,div,dl,dt,\nem,embed,fieldset,figcaption,figure,footer,form,h1,h2,h3,h4,h5,h6,header,hgroup,html,i,iframe,img,ins,kbd,label,legend,li,mark,menu,nav,\nobject,ol,output,p,pre,q,ruby,s,samp,section,small,span,strike,strong,sub,summary,sup,table,tbody,td,tfoot,th,thead,time,tr,tt,u,ul,var,video{ font:inherit;margin:0;padding:0;vertical-align:baseline;border:0 }\nbody{ font-size:16px; line-height:1.5; color:#999; background:transparent; }\n.wrapper{ overflow:hidden;word-break:break-all;padding:10px; }\nh1,h2{ font-weight:normal; line-height:1.35; margin-bottom:.6em; }\nh3,h4,h5,h6{ line-height:1.35; margin-bottom:1em; }\nh1{ font-size:24px; }\nh2{ font-size:20px; }\nh3{ font-size:18px; }\nh4{ font-size:16px; }\nh5{ font-size:14px; }\nh6{ font-size:12px; }\np,ul,ol,blockquote,dl,table{ margin:1.2em 0; }\nul,ol{ margin-left:2em; }\nul{ list-style:disc; }\nol{ list-style:decimal; }\nli,li p{ margin:10px 0;}\nimg{ max-width:100%;display:block;margin:0 auto 1em; }\nblockquote{ color:#B5B2B1; border-left:3px solid #aaa; padding:1em; }\nstrong,b{font-weight:bold;}\nem,i{font-style:italic;}\ntable{ width:100%;border-collapse:collapse;border-spacing:1px;margin:1em 0;font-size:.9em; }\nth,td{ padding:5px;text-align:left;border:1px solid #aaa; }\nth{ font-weight:bold;background:#5d5d5d; }\n.symbol-link{font-weight:bold;}\n/* header{ border-bottom:1px solid #494756; } */\n.title{ margin:0 0 8px;line-height:1.3;color:#ddd; }\n.meta {color:#5e5c6d;font-size:13px;margin:0 0 .5em; }\na{text-decoration:none; color:#2a4b87;}\n.meta .head { display: inline-block; overflow: hidden}\n.head .h-thumb { width: 30px; height: 30px; margin: 0; padding: 0; border-radius: 50%; float: left;}\n.head .h-content { margin: 0; padding: 0 0 0 9px; float: left;}\n.head .h-name {font-size: 13px; color: #eee; margin: 0;}\n.head .h-time {font-size: 11px; color: #7E829C; margin: 0;line-height: 11px;}\n.small {font-size: 12.5px; display: inline-block; transform: scale(0.9); -webkit-transform: scale(0.9); transform-origin: left; -webkit-transform-origin: left;}\n.smaller {font-size: 12.5px; display: inline-block; transform: scale(0.8); -webkit-transform: scale(0.8); transform-origin: left; -webkit-transform-origin: left;}\n.bt-text {font-size: 12px;margin: 1.5em 0 0 0}\n.bt-text p {margin: 0}\n</style>\n</head>\n<body>\n<div class=\"wrapper\">\n<header>\n<h2 class=\"title\">\n接口速度5.6 GT/s、超400层！三星将推出第10代V-NAND闪存\n</h2>\n\n<h4 class=\"meta\">\n\n\n2024-12-05 11:56 北京时间&nbsp;&nbsp;&nbsp;<a href=https://tech.ifeng.com/c/8f3y6Bzi8iX><strong>快科技</strong></a>\n\n\n</h4>\n\n</header>\n<article>\n<div>\n<p>快科技12月5日消息，据媒体报道，三星即将在国际固态电路会议（ISSCC）上展示其最新的第10代超过400层3D NAND Flash，接口速度可达5.6 GT/s。三星的这一新一代V-NAND保持了TLC（三级单元，或每个单元3位）架构，每个芯片的容量为1Tb（128GB）。三星声称，其新的超400层3D TLC NAND Flash的存储密度达到了28 Gb/mm²，略低于其1Tb 3D ...</p>\n\n<a href=\"https://tech.ifeng.com/c/8f3y6Bzi8iX\">网页链接</a>\n\n</div>\n\n\n</article>\n</div>\n</body>\n</html>\n","isBrief":false,"type":0,"news_type":1,"symbol":"BK4588","symbol_name":"碎股","start_time":0,"source_url":"https://tech.ifeng.com/c/8f3y6Bzi8iX","article_id":"2489164106","we_media_id":null,"thumbnails":[],"rights":null,"url":"https://stock-news.laohu8.com/highlight/detail?id=2489164106","pubTimestamp":1733371006,"columns":[],"sourceInfo":{"source_id":"fenghuang_stock","name":"凤凰网"},"weMediaInfo":null,"summary":"三星的这一新一代V-NAND保持了TLC架构，每个芯片的容量为1Tb。三星声称，其新的超400层3D TLC NAND Flash的存储密度达到了28 Gb/mm，略低于其1Tb 3D QLC V-NAND的28.5 Gb/mm，后者是目前世界上存储密度最高的NAND Flash。此外，三星第10代V-NAND的接口速度达到5.6 GT/s，明显快于长江存储的3.6 GT/s。三星计划在ISSCC 10上推出第10代V-NAND，因此很可能在明年开始批量生产这种NAND Flash，只是尚不清楚新何时会进入三星自己的SSD。","collect":0,"end_time":0,"defaultTopTitle":"ifeng.com","property":[],"viewcount":null,"language":"zh","relate_stocks":{"BK4588":"碎股","BK4119":"轮胎与橡胶","BK4585":"ETF&股票定投概念","GT":"固特异轮胎橡胶公司"},"translate_title":"Interface speed 5.6 GT/s, Super 400 floors! Samsung to launch 10th generation V-NAND flash memory","themeId":null,"isJumpTheme":false,"ttsUrl":null,"symbols_score_info":{"GT":1},"content_text":"快科技12月5日消息，据媒体报道，三星即将在国际固态电路会议（ISSCC）上展示其最新的第10代超过400层3D NAND Flash，接口速度可达5.6 GT/s。三星的这一新一代V-NAND保持了TLC（三级单元，或每个单元3位）架构，每个芯片的容量为1Tb（128GB）。三星声称，其新的超400层3D TLC NAND Flash的存储密度达到了28 Gb/mm²，略低于其1Tb 3D QLC V-NAND的28.5 Gb/mm²，后者是目前世界上存储密度最高的NAND Flash。此外，三星第10代V-NAND的接口速度达到5.6 GT/s，明显快于长江存储的3.6 GT/s。在5.6 GT/s的速度下，相当于约700 MB/s的数据传输速率，意味着其中10个设备可以使PCIe4.0 x4接口饱和，而20个足以使超快的PCIe5.0x4接口饱和。三星计划在ISSCC 10上推出第10代V-NAND，因此很可能在明年开始批量生产这种NAND Flash，只是尚不清楚新何时会进入三星自己的SSD。","kind":"news","is_publish_news":true,"is_publish_highlight":false,"is_publish_live":false,"is_publish_wemedia":null,"editions":null,"column":"","sentiment":"1","news_tag":"productRelease","news_rank":0,"symbols":[],"gpt_button":1},"commentList":[],"isCommentEnd":true,"newsSizeData":{"likeSize":0,"commentSize":0,"repostSize":0,"favoriteSize":0,"likeStatus":false,"favoriteStatus":false},"APP":{"userAgent":"Mozilla/5.0 AppleWebKit/537.36 (KHTML, like Gecko; compatible; ClaudeBot/1.0; +claudebot@anthropic.com)","isDev":false,"isTTM":false,"deviceId":"web-server-community-laohu8-v3","version":"4.29.3","shortVersion":"4.29.3","platform":"web","vendor":"web","appName":"laohu8","isIOS":false,"isAndroid":false,"isTiger":false,"isTHS":false,"isWeiXin":false,"isWeiXinMini":false,"isWeiBo":false,"isQQ":false,"isBaiduSwan":false,"isBaiduBox":false,"isDingTalk":false,"isToutiao":false,"isOnePlus":false,"isHuaWei":false,"isXiaomi":false,"isXiaomiWebView":false,"isOppo":false,"isVivo":false,"isSamsung":false,"isMobile":false},"href":"/m/news/2489164106"}