消息称三星下代400+层V-NAND2026年推出

美港电讯10-29

【消息称三星下代400+层V-NAND2026年推出】金十数据10月29日讯，三星电子将于2026年推出的下代V-NAND 堆叠层数超过400，预计于2027年推出的0a nm DRAM则将采用VCT结构。报道表示三星第10代（即下代） V-NAND将被命名为BV（Bonding Vertical） NAND，这是因为这代产品将调整NAND结构，从目前的CoP外围上单元改为分别制造存储单元和外围...

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{"i18n":{"language":"zh_CN"},"isChannel":false,"data":{"share":"https://www.laohu8.com/m/news/2479440842?lang=zh_CN&edition=full","thumbnail":"","is_english":false,"pubTime":"2024-10-29 15:17","share_image_url":"https://static.laohu8.com/e9f99090a1c2ed51c021029395664489","id":"2479440842","market":"us","top_or_hot":-1,"title":"消息称三星下代400+层V-NAND2026年推出","media":"美港电讯","content":"<div>\n<p>【消息称三星下代400+层V-NAND2026年推出】金十数据10月29日讯，三星电子将于2026年推出的下代V-NAND 堆叠层数超过400，预计于2027年推出的0a nm DRAM则将采用VCT结构。报道表示三星第10代（即下代） V-NAND将被命名为BV（Bonding Vertical） NAND，这是因为这代产品将调整NAND结构，从目前的CoP外围上单元改为分别制造存储单元和外围...</p>\n\n<a href=\"https://www.ushknews.com/\">网页链接</a>\n\n</div>\n","source":"live_meigang","html":"<!DOCTYPE html>\n<html>\n<head>\n<meta http-equiv=\"Content-Type\" content=\"text/html; charset=utf-8\" />\n<meta name=\"viewport\" content=\"width=device-width,initial-scale=1.0,minimum-scale=1.0,maximum-scale=1.0,user-scalable=no\"/>\n<meta name=\"format-detection\" content=\"telephone=no,email=no,address=no\" />\n<title>消息称三星下代400+层V-NAND2026年推出</title>\n<style type=\"text/css\">\na,abbr,acronym,address,applet,article,aside,audio,b,big,blockquote,body,canvas,caption,center,cite,code,dd,del,details,dfn,div,dl,dt,\nem,embed,fieldset,figcaption,figure,footer,form,h1,h2,h3,h4,h5,h6,header,hgroup,html,i,iframe,img,ins,kbd,label,legend,li,mark,menu,nav,\nobject,ol,output,p,pre,q,ruby,s,samp,section,small,span,strike,strong,sub,summary,sup,table,tbody,td,tfoot,th,thead,time,tr,tt,u,ul,var,video{ font:inherit;margin:0;padding:0;vertical-align:baseline;border:0 }\nbody{ font-size:16px; line-height:1.5; color:#999; background:transparent; }\n.wrapper{ overflow:hidden;word-break:break-all;padding:10px; }\nh1,h2{ font-weight:normal; line-height:1.35; margin-bottom:.6em; }\nh3,h4,h5,h6{ line-height:1.35; margin-bottom:1em; }\nh1{ font-size:24px; }\nh2{ font-size:20px; }\nh3{ font-size:18px; }\nh4{ font-size:16px; }\nh5{ font-size:14px; }\nh6{ font-size:12px; }\np,ul,ol,blockquote,dl,table{ margin:1.2em 0; }\nul,ol{ margin-left:2em; }\nul{ list-style:disc; }\nol{ list-style:decimal; }\nli,li p{ margin:10px 0;}\nimg{ max-width:100%;display:block;margin:0 auto 1em; }\nblockquote{ color:#B5B2B1; border-left:3px solid #aaa; padding:1em; }\nstrong,b{font-weight:bold;}\nem,i{font-style:italic;}\ntable{ width:100%;border-collapse:collapse;border-spacing:1px;margin:1em 0;font-size:.9em; }\nth,td{ padding:5px;text-align:left;border:1px solid #aaa; }\nth{ font-weight:bold;background:#5d5d5d; }\n.symbol-link{font-weight:bold;}\n/* header{ border-bottom:1px solid #494756; } */\n.title{ margin:0 0 8px;line-height:1.3;color:#ddd; }\n.meta {color:#5e5c6d;font-size:13px;margin:0 0 .5em; }\na{text-decoration:none; color:#2a4b87;}\n.meta .head { display: inline-block; overflow: hidden}\n.head .h-thumb { width: 30px; height: 30px; margin: 0; padding: 0; border-radius: 50%; float: left;}\n.head .h-content { margin: 0; padding: 0 0 0 9px; float: left;}\n.head .h-name {font-size: 13px; color: #eee; margin: 0;}\n.head .h-time {font-size: 11px; color: #7E829C; margin: 0;line-height: 11px;}\n.small {font-size: 12.5px; display: inline-block; transform: scale(0.9); -webkit-transform: scale(0.9); transform-origin: left; -webkit-transform-origin: left;}\n.smaller {font-size: 12.5px; display: inline-block; transform: scale(0.8); -webkit-transform: scale(0.8); transform-origin: left; -webkit-transform-origin: left;}\n.bt-text {font-size: 12px;margin: 1.5em 0 0 0}\n.bt-text p {margin: 0}\n</style>\n</head>\n<body>\n<div class=\"wrapper\">\n<header>\n<h2 class=\"title\">\n消息称三星下代400+层V-NAND2026年推出\n</h2>\n\n<h4 class=\"meta\">\n\n\n2024-10-29 15:17 北京时间&nbsp;&nbsp;&nbsp;<a href=https://www.ushknews.com/><strong>美港电讯</strong></a>\n\n\n</h4>\n\n</header>\n<article>\n<div>\n<p>【消息称三星下代400+层V-NAND2026年推出】金十数据10月29日讯，三星电子将于2026年推出的下代V-NAND 堆叠层数超过400，预计于2027年推出的0a nm DRAM则将采用VCT结构。报道表示三星第10代（即下代） V-NAND将被命名为BV（Bonding Vertical） NAND，这是因为这代产品将调整NAND结构，从目前的CoP外围上单元改为分别制造存储单元和外围...</p>\n\n<a href=\"https://www.ushknews.com/\">网页链接</a>\n\n</div>\n\n\n</article>\n</div>\n</body>\n</html>\n","isBrief":false,"type":0,"news_type":1,"symbol":"SMSD.UK","symbol_name":"三星电子","start_time":0,"source_url":"https://www.ushknews.com/","article_id":"2479440842","we_media_id":null,"thumbnails":[],"rights":null,"url":"https://stock-news.laohu8.com/highlight/detail?id=2479440842","pubTimestamp":1730186225,"columns":[],"sourceInfo":{"source_id":"live_meigang","name":"美港电讯"},"weMediaInfo":null,"summary":"【消息称三星下代400+层V-NAND2026年推出】金十数据10月29日讯，三星电子将于2026年推出的下代V-NAND 堆叠层数超过400，预计于2027年推出的0a nm DRAM则将采用VCT","collect":0,"end_time":0,"defaultTopTitle":"ushknews.com","property":[],"viewcount":null,"language":"zh","relate_stocks":{"SMSD.UK":"三星电子","BK5113":"电脑硬件、储存设备及电脑周边","03145":"华夏亚洲高息股","SG9999004220.SGD":"Nikko AM Shenton Asia Dividend Equity Fund  SGD","LU0162691827.USD":"BGF US BASIC VALUE \"A4\" INC","DRAM":"达泰莱","LU0868486357.SGD":"JPMorgan Funds - Emerging Markets Opportunities A (acc) SGD-H","BV":"Brightview Holdings Inc.","SSNLF":"三星电子","BK4170":"电脑硬件、储存设备及电脑周边","LU0072461881.USD":"BGF US BASIC VALUE \"A2\" ACC","SMSN.UK":"三星","LU0823038988.USD":"AMUNDI FUNDS ASIA EQUITY FOCUS  \"A2\" (USD) ACC","LU0431992006.USD":"摩根大通新兴市场机会A（acc）","BK4120":"环境与设施服务","LU0823039010.USD":"AMUNDI FUNDS ASIA EQUITY FOCUS  \"A2\" (USD) INC"},"translate_title":"It is reported that Samsung's next generation 400 + layer V-NAND will be launched in 2026","themeId":null,"isJumpTheme":false,"ttsUrl":null,"symbols_score_info":{"BV":1,"DRAM":1,"SMSD.UK":1,"SMSN.UK":1,"SSNLF":1,"03145":0.6},"content_text":"【消息称三星下代400+层V-NAND2026年推出】金十数据10月29日讯，三星电子将于2026年推出的下代V-NAND 堆叠层数超过400，预计于2027年推出的0a nm DRAM则将采用VCT结构。报道表示三星第10代（即下代） V-NAND将被命名为BV（Bonding Vertical） NAND，这是因为这代产品将调整NAND结构，从目前的CoP外围上单元改为分别制造存储单元和外围电路后垂直键合。","kind":"live","is_publish_news":false,"is_publish_highlight":false,"is_publish_live":true,"is_publish_wemedia":null,"editions":null,"column":"","sentiment":"0","news_tag":"","news_rank":0,"symbols":[],"gpt_button":0},"commentList":[],"isCommentEnd":true,"newsSizeData":{"likeSize":0,"commentSize":0,"repostSize":0,"favoriteSize":0,"likeStatus":false,"favoriteStatus":false},"APP":{"userAgent":"Mozilla/5.0 AppleWebKit/537.36 (KHTML, like Gecko; compatible; ClaudeBot/1.0; +claudebot@anthropic.com)","isDev":false,"isTTM":false,"deviceId":"web-server-community-laohu8-v3","version":"4.29.3","shortVersion":"4.29.3","platform":"web","vendor":"web","appName":"laohu8","isIOS":false,"isAndroid":false,"isTiger":false,"isTHS":false,"isWeiXin":false,"isWeiXinMini":false,"isWeiBo":false,"isQQ":false,"isBaiduSwan":false,"isBaiduBox":false,"isDingTalk":false,"isToutiao":false,"isOnePlus":false,"isHuaWei":false,"isXiaomi":false,"isXiaomiWebView":false,"isOppo":false,"isVivo":false,"isSamsung":false,"isMobile":false},"href":"/m/news/2479440842"}