消息称三星下代400+层V-NAND2026年推出

美港电讯10-29

【消息称三星下代400+层V-NAND2026年推出】金十数据10月29日讯，三星电子将于2026年推出的下代V-NAND 堆叠层数超过400，预计于2027年推出的0a nm DRAM则将采用VCT结构。报道表示三星第10代（即下代） V-NAND将被命名为BV（Bonding Vertical） NAND，这是因为这代产品将调整NAND结构，从目前的CoP外围上单元改为分别制造存储单元和外围...

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