斯达半导申请一种复合银膜及其制备方法和硅基GaN芯片烧结方法专利，复合银膜可以在整个烧结制程中减少因热胀冷缩造成的芯片应力损伤导致的裂纹问题，经过烧结后芯片与基板之间接头剪切强度高

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金融界2024年6月25日消息，天眼查知识产权信息显示，斯达半导体股份有限公司申请一项名为“一种复合银膜及其制备方法和硅基GaN芯片烧结方法“，公开号CN202410336841.3，申请日期为2024年3月。专利摘要显示，本发明提供一种复合银膜及其制备方法和硅基GaN芯片烧结方法，复合银膜用作硅基GaN芯片烧结的焊料，步骤A1，对由纳米银颗粒和微米银颗粒组成的双峰银颗粒进行处理后得到双峰银浆，...

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