高通公司申请金属氧化物金属(MOM)电容器中的线路后端(BEOL)高电阻(HI-R)导体层专利，实现高电阻导体层与金属层相邻设置

金融界网站2023-12-05

转自：金融界本文源自:金融界金融界2023年12月5日消息，据国家知识产权局公告，高通股份有限公司申请一项名为“金属氧化物金属(MOM)电容器中的线路后端(BEOL)高电阻(HI-R)导体层“，公开号CN117178356A，申请日期为2022年3月。专利摘要显示，公开了一种金属氧化物金属(MOM)电容器及其制造方法。MOM电容器包括具有第一多个指状物的第一金属层，第一多个指状物中的每个指状物被...

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